SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices
John D. Cressler
CRC Press
Hardback
264
39417
Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume focuses on the materials science aspects of silicon heterostructure. It defines and details the many advances in the Si-SiGe strained-layer epitaxy for device app

SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices

  • Publisher: CRC Press
  • ISBN: 9781420066852
  • Availability: Η διαθεσιμότητα των βιβλίων εξαρτάται από τον εκάστοτε εκδότη.
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